IEEE Nanotechnology Materials and Devices Conference (NMDC)
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Announcing NMDC 2021 Call for Papers

Sunday, October 25th, 2020

16th IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2021) Call for Papers

IEEE NMDC 2021 sponsored by IEEE Nanotechnology Council (NTC) will be held in the Pinnacle Harbourfront Hotel located in the center of Vancouver, BC, Canada from October 17th to 20th, 2021. The conference will be co-located with another conference – IEEE CEIDP (Conference on Electrical Insulation and Dielectric Phenomena) sponsored by IEEE Dielectrics and Electrical Insulation Society (DEIS).

IEEE NMDC is a well-received international conference and has been held annually rotating in different parts of the world, having the last two editions in Stockholm, Sweden in 2019 and Virtually (due to COVID-19 restrictions) in 2020. IEEE NMDC aims to highlight current work and future directions in nanotechnology-related research in the areas of nanomaterials and fabrications, nanoelectronics, nano-energy, packaging, nanophotonics, bioengineering, modeling and simulation, devices, and integration. This conference brings together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.


The technical program for NMDC 2021 provides a wide variety of topics that emphasize the role of nanoscale phenomena, materials and devices in established and emerging technological areas. Before submitting abstracts, researchers are encouraged to examine the Technical Program Areas to identify the ones that most closely reflect the emphasis of their work.


Deji Akinwande

Sunday, October 25th, 2020

Adventures with Atomic Materials: from Flexible/Wearable Electronics to Memory Devices

Deji Akinwande, University of Texas – Austin


This talk will present our latest research adventures on 2D nanomaterials towards greater scientific understanding and advanced engineering applications. In particular, the talk will highlight our work on flexible electronics, zero-power devices, monolayer memory (atomristors), non-volatile RF switches, and wearable tattoo sensors. Non-volatile memory devices based on 2D materials are an application of defects and is a rapidly advancing field with rich physics that can be attributed to sulfur vacancies or metal diffusion. Atomistic modeling and atomic resolution imaging are contemporary tools under use to elucidate the memory phenomena. Likewise, from a practical point, electronic tattoos based on graphene have ushered a new material platform that has highly desirable practical attributes including optical transparency, mechanical imperceptibility, and is the thinnest conductive electrode sensor that can be integrated on skin for physiological measurements. Much of these research achievements have been published in nature, advanced materials, IEEE and ACS journals.


Deji Akinwande is an Endowed Full Professor at the University of Texas at Austin. He received the PhD degree from Stanford University in 2009. His research focuses on 2D materials and nanoelectronics/technology, pioneering device innovations from lab towards applications. Prof. Akinwande has been honored with the 2019 Fulbright Specialist Award, 2017 Bessel-Humboldt Research Award, the U.S Presidential PECASE award, the inaugural Gordon Moore Inventor Fellow award, the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE “Early Career Award” in Nanotechnology, the NSF CAREER award, several DoD Young Investigator awards, and was a past recipient of fellowships from the Kilby/TI, Ford Foundation, Alfred P. Sloan Foundation, 3M, and Stanford DARE Initiative. His research achievements have been featured by Nature news, Time magazine, BBC, Discover magazine, and many media outlets. He serves as an Editor for the IEEE Electron Device Letters and Nature NPJ 2D Materials and Applications. He Chairs the 2020 Gordon Research Conference on 2D materials, and was the past chair of the 2019 Device Research Conference (DRC), and the 2018 Nano-device committee of IEEE IEDM Conference. He is a Fellow of the IEEE and the American Physical Society (APS).


David Gracias

Sunday, October 25th, 2020

3D Nanofabrication by curving, bending, and folding

David Gracias, Professor, Department of Chemical and Biomolecular Engineering, Johns Hopkins University


Conventional VLSI lithographic patterning approaches have revolutionized modern engineering, but they are inherently planar. Recently, researchers have discovered that the interplay between out-of-plane stresses, capillary forces or swelling vs bending rigidity of patterned thin films can be engineered so as to cause spontaneous 2D to 3D shape transformations by curving, bending, and folding in a reproducible and high-throughput manner.

In this talk, the design, assembly, and characterization of such 3D nanostructured materials and devices will be described. The emphasis of our approach has been on enabling mass-production of lithographically micro, nano, and smart 3D devices in a high-throughput manner with diverse materials such as 2D layered materials (e.g. graphene, MoS2), silicon and related materials, polymers (e.g. SU8) and hydrogels. By leveraging the precision of planar lithography approaches such as photo, e-beam, and nanoimprint methodologies, a range of functional patterns can be incorporated into these thin film self-assembling systems so as to provide enhanced functionality for optics, electronics, and medicine. Assembled devices include metamaterials, flexible biosensors, curved microfluidics, drug-delivery capsules, anatomically realistic models for tissue engineering, antennas, e-blocks, sensors, soft-robotic actuators, and untethered surgical tools.


David Gracias is a Professor at the Johns Hopkins University (JHU) in Baltimore. He did his undergraduate at the Indian Institute of Technology, received his PhD from UC Berkeley, did post-doctoral research at Harvard University and worked at Intel Corporation prior to starting his independent laboratory at JHU in 2003. Prof. Gracias has pioneered the development of 3D, integrated micro and nanodevices using a variety of patterning, self-folding and self-assembly approaches.  He has co-authored over 190 technical articles, holds 33 issued patents and has delivered over 100 invited technical talks. Prof. Gracias has received a number of major awards including the NIH Director’s New Innovator Award, Beckman Young Investigator Award, NSF Career Award, Camille Dreyfus Teacher Scholar Award, Beckman Young Investigator Award, and Friedrich Wilhelm Bessel Award. He is a Fellow of the American Institute for Medical and Biological Engineering (AIMBE), Royal Society of Chemistry (RSc), American Association for the Advancement of Science (AAAS) and the Institute of Electrical and Electronics Engineers (IEEE).


Christopher Homes

Sunday, October 25th, 2020

Progress in High-Dielectric Constant Materials

Christopher Homes, Brookhaven National Laboratory


The static dielectric constant of a material Ɛ0 is a scaling factor for capacitors and the devices based upon them; the larger the dielectric constant, the greater the degree of miniaturization. Materials with a dielectric constant greater than that of silicon nitride (Ɛ0 ~ 7) are referred to as high-dielectric constant materials. Values of Ɛ0 ~ 100 are typical in rutile (titanium dioxide); however, values in excess of 104 are observed in barium titanate in the region of the ferroelectric transition – while this value is impressive, it is not very useful due to the strong temperature dependence. The observation of Ɛ0 ~ 105 in the calcium copper titanate (CaCu3Ti4O12) material sparked considerable interest because it showed little temperature dependence between 100 – 600 K. Optical and impedance spectroscopies revealed that the high dielectric constant in this material was ultimately due to the extrinsic internal boundary layer capacitance effect. Unfortunately, the dielectric losses in these materials are relatively high. A new strategy to achieve high dielectric permittivity with low loss involves using localized lattice defect states through ambipolar co-doping; these intrinsic defect complexes give rise to strong dipoles that are responsible for Ɛ0 in excess of 104, with exceptionally low dielectric losses over most of the radio frequency range and excellent thermal stability, will allow further scaling advances in electronic devices.


Christopher Homes is a Physicist (with tenure) and a member of the Electron Spectroscopy Group in the Condensed Matter Physics and Material Science Department at Brookhaven National Laboratory (BNL). His research is focused on the complex optical properties of quantum materials, including topological and strongly correlated electron systems, with an emphasis on emergent phenomena. Previous work has examined the optical properties of the cuprate and iron-based superconductors, as well as high-dielectric constant materials; recent work deals mainly with the Dirac and Weyl semimetals. Prior to arriving at BNL in 1996, he was a postdoctoral fellow at Simon Fraser and McMaster University. He received his M.Sc. and Ph.D. in physics from the University of British Columbia, and his B.Sc. in physics from McMaster University. He is a Fellow of the American Physical Society and a recipient of the Brookhaven Science and Technology Award.


Mark Johnson

Sunday, October 25th, 2020

Practical Quantum Computing

Mark Johnson, D-Wave


Quantum computing has entered an era where differentiation is better measured in the variety and value of customer applications than it is with physical device metrics. I will review D-Wave’s recent product release, advantage, its role in D-Wave’s approach to attacking business scale problems, and some of the practical uses it is being put to.  These include scheduling, logistics, portfolio optimization, risk assessment, and de novo protein design. Quantum annealing has also shown significant promise in quantum materials simulation, and I will review some of the most important results in this area. While there are no Universal Quantum Computers today, I will discuss the prospects for, and directions towards Universal Quantum Computing.


Mark Johnson Ph.D., Vice President of Quantum Products. Mark joined D-Wave in 2005 as an experimental physicist and superconducting circuit design engineer. He continues to work with the D-Wave’s Quantum Processor Development Team as it has developed and delivered five generations of commercial Quantum Annealing Systems. Prior to joining D-Wave, Mark worked as a Scientist with the Superconductive Electronics Organization in TRW, Inc.